| 摘要 |
PURPOSE:To obtain the second fine film patterns on only the surface of a substrate under an eave by ion etching by consisting the first film having an eave as a mask wherein the second film is evaporated. CONSTITUTION:Eaves 22 are generated by stacking positive-type 2 and negative- type 3 photoresists on a substrate 1 and by successively applying exposure and development. Next, conductive films 4 are formed as far as the surface of the substrate directly below the eaves 22 by oblique evaporation. With ion etching applied vertically and the conductive films 4 on the resist 3 and the substrate 1 removed, the conductive films 44 will be left under the eaves. The remaining width is decided by the eave width l. Minute wiring patterns 44 will be completed by removing the resists 2, 3. |
