| 摘要 |
PURPOSE:To form a uniform evaporated film, in evaporation of a wiring metal material such as Al or the like to a surface of a semiconductor substrate in a vacuum bell jar, by limiting an injecting angle of evaporating metal particles against the surface of said substrate to a specific value or below. CONSTITUTION:A metal evaporation source 12 such as Al or the like is placed in the vacuum bell jar 10 and Al particles 8a-8f are collided to semiconductor wafers 20a-20f by irradiating electron beam to deposit Al as the wiring metal material. In this case, the semiconductor wafers 20a-20f are attached to a dish 18 rotating to a B direction by a rotary shaft 18a and said dish 18 itself is attached to a cone shaped holder 16 revolving to an A direcdion by a motor 14. Therefore, the semiconductor wafers are rotated to upward and downward directions as well as also rotated to the A direction. The Al particles 8a-8f are collided to said wafers but a shield body 22 is placed to an upper part so as to adjust an angle theta formed by the direction of said Al particles and wafer surfaces to 45 deg. or below to prevent the generation of abnormal evaporated parts. |
