| 摘要 |
PURPOSE:To facilitate manufacture of a semiconductor laser device as well as improve its quality by selectively forming a plurality of semiconductor layers, by epitaxial growth, on the crystal surface on the inclined plane obtained by photoetching a semiconductor substrate into a step shape. CONSTITUTION:On an N type semiconductor substrate 1, an insulating layer 2 and a photoresist film 3 are formed over the whole surface. Then, the resist 3 is partially irradiated with light 4 to photoetch the substrate 1 into a step shape. Then, an insulating layer 7 and a photoresist film 8 are formed over the whole surface and partially irradiated with light 9 to photoetch the inclined plane 6 so that a crystal surface 10 is exposed below the layers 2 and 7. Then, on the insulating layer 7 on the lower step surface 5, an N type layer 11, an active layer 12 and P type layers 13 and 14 are successively formed on the crystal surface 10 by selective epitaxial growth, and then electrodes 15 and 16 are formed. Thereby, a semiconductor laser device can be manufactured by a single photoetching and a single epitaxial growth, so that the manufacture is facilitated. Moreover, the quality and the yield improve. |
