发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the interference of an electromagnetic wave in a circuit element by a construction wherein an insulated board covered with SiO2 is put in between the circuit element and a support on the surface of a glass material in which SiC powder has been dispersed. CONSTITUTION:A glass material is used to electrically insulate an Si circuit element 13 and a copper support 11. On the other hand, since SiC powder with a thermo- conduction rate of 0.18cal/cm.s. deg.C offers excellent thermo-conductivity, it supplements the radiation of the glass material. The thermo-expansion factor of the material is 4X10<-6>/ deg.C, which is quite near that of Si, so that it is possible to make the thermo-expansion factor of the glass material close to that of an Si semiconductor. Furthermore, since SiC itself has excellent mechanical strength, it maintaine the solidity of the glass material. Thus, using a board 12 in which SiC has been dispersed in glass of ZnO-ObO-SiO2-B2O3 series 23 and coated with SiO2, an Si element 13 is made to adhere to a support 11. By so doing, they can be combined together without impairing their insulation, radiation, heat and fatigue resistance.
申请公布号 JPS56116631(A) 申请公布日期 1981.09.12
申请号 JP19800019143 申请日期 1980.02.20
申请人 HITACHI LTD 发明人 KURIHARA YASUTOSHI;IRINO KOUMEI
分类号 H05K1/18;H01L21/52;H01L23/373 主分类号 H05K1/18
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