| 摘要 |
<p>PURPOSE:To decrease peeling of a pattern film during washing and prolong the service life of a photomask by washing the photomask with washing water in a water soluble gas atmosphere. CONSTITUTION:A photomask 1 of a chromium plate or the like used in the process for production of semiconductor devices is supported on a revolving shaft and is rotated within a horizontal plane, then a water soluble gas such as NH3 or CO2 is blown to the washing surface of the mask 1, and washing water such as pure water injected under high pressure from an injection nozzle 2, whereby the photomask is washed. Thereby, the static charge generated during the washing is neutralized by the water soluble gas ions and the effective washing which does not cause pattern peeling and resticking of fine particles of dust is accomplished.</p> |
