| 摘要 |
PURPOSE:To obtain a high-output basic horizontal mode, by a method wherein a strip-shaped depression is formed on the surface of a semiconductor substrate, and a guide layer and a photon-sealing layer are provided on the upper and lower sides of a layer which becomes an active region at the time of liquid-phase epitaxial growth. CONSTITUTION:A photoresist film 21 having an opening is provided on an n-type GaAs substrate 10 having surface [100]. By chemical etching, depression 19 forming a stripe in the direction (110) is produced in the substrate 10 exposed in the opening. Next, the film 21 is removed, and an n-type Al0.38Ga0.62As layer 11, which is to become a layer to seal in photons and carriers, is epitaxially grown in liquid phase on the entire surface along the shape of depression 19. On top of this is grown an n-type Al0.1Ga0.9As light guide layer 12 with its upper surface made flat. Subsequently, a p-type GaAs active layer 13, a p-type Al0.38Ga0.62As layer 14 which functions same as the layer 11, and a p-type GaAs contact-easy layer 16 are laminated and grown on top of this. In this structure, a forward bias is impressed on the junction 20 between the layers 12 and 13. |
