| 摘要 |
PURPOSE:To prevent the erroneous operation of the semiconductor integrated circuit device by forming a one conductivity type low density layer on a one conductivity type high density substrate, isolating a reverse conductivity type layer formed thereon with an isolating layer reaching the high density substrate and isolating an input circuit and a transistor, thereby eliminating the parasitic effect causing the erroneous operation. CONSTITUTION:A P type layer 1 is formed on a P<+> type substrate 23, and isolating P<+> type regions 22, 22', 22'' and N<+> type buried layers 1, 12 are formed thereon. The isolating P<+> type region reaches the P<+> type substrate, but does not reach the N<+> type buried layer. N type epitaxial layers 3, 13, 3', 3'' are formed on the surface, and P type base 16, P type isolating regions 21, 21', P type regions 4, 4' are formed thereon. An N type emitter 15 and N type region 6 are formed, and metals 9, 11 forming SBD5, 7, respectively are formed. An input terminal 10 is formed at the N type region 6, the metal 11 is connected to the base 19, and the metal 9 is connected to the minimum potential. Thus, the parasitic NPN transistor in which the N type regions 2, 3 are emitter, the N type regions 12, 13 are collector and the P type region therebetween is base can be eliminated in effect. |
