| 摘要 |
PURPOSE:To enable the dry patterning of a resist film by coating the resist film on the surface of a semiconductor substrate, irradiating a plasma or ion beam in accordance with a predetermined pattern on the surface of the film, and allowing it to stand in O2 plasma. CONSTITUTION:The resist pattern 13 is formed on the semiconductor substrate 11 having a thermal silicon oxide film 12. The plasma 14 formed of CF4 gas is irradiated on the surface of the resist film 13 in accordance with the desired pattern. Then, the substrate 11 is allowed to stand in the O2 plasma in an etching tunnel 16, the part in which the plasma is not irradiated is etched and removes as a resist pattern 13'. Thus, it can prevent the irregularity in the patterning characteristics and conduct the infinitesimal dry patterning. |
