| 摘要 |
PURPOSE:To equalize the thickness of film of a growth layer and to prevent the adhesion of generated material by reaction to a bell jar by a method wherein a heat source is provided at the position being exposed to a reaction gas and confronting with a substrate for growth, and the substrate is heated by radiation from the heat source. CONSTITUTION:The semiconductor substrate (Si, etc.) 1 are held on susceptors 3 in the bell jar 8, the susceptors 3 are made to be rotatable by a hollow shaft 4, and the source gas and a carrier gas are introduced from a blow in port 7. The heater 10 is arranged at the position confronting with the substrates, and the substrates 1 are heated by radiation from the heater to make thin films to grow on the substrates. Because the heat source 10 is put in the bell jar and has a higher temperature than the substrates, no generated material by reaction adheres to the surface of heat source and also to the inside face of bell jar, so that the equalization of the thickness of growth film can be contrived, and the generation of crystal defect to be caused by imperfect contact is eliminated because of the heating by radiation. |
