| 摘要 |
PURPOSE:To improve the integration of the horizontal pnp transistor by forming a polycrystalline silicon layer on the surface of a base region between the emitter and the collector except the part making contact with the surface of a collector electrode and reducing the area of the emitter electrode with a part limited of the emitter region as n<+> type. CONSTITUTION:After a window for the electrode is formed at the n type epitaxial layer 4 formed laterally with a p type emitter region 5 and a p type collector region 6, a polycrystalline layer 10 is formed on the layer 4. Thereafter, n type impurity is introduced into a part 5 of the emitter region, the region forming the base electrode and the layer 10 for covering these regions. Then, electrodes 13, 14 and desire wires are formed on the layer 4. Subsequently, the polycrystalline silicon layer is retained on the region 10' interposed between the emitter and the collector, and removed from the region except the corresponding region. The layer 4 is heat treated, and the polycrystalline silicon layer of the region approaching the collector electrode 14 is absorbed to the electrode metallic aluminum. In figure reference numeral 3 designates an isolation layer and 7 an insulating film. |
