| 摘要 |
PURPOSE:To improve the reliability of the semiconductor wafer by setting the temperature of evaporating gold on the back surface of the wafer lower then the gold- silicon eutectic temperature, thereby preventing the deterioration of the characteristics thereof. CONSTITUTION:The gold 12 is evaporated on the back surface of the silicon wafer 11, and the temperature is set lower than the gold-Si eutectic temperature 370 deg.C, such as, for example, 350 deg.C and the like. After the wafer 11 thus evaporated with the gold 12 is isolated from the chip, it is mounted on the ceramic substrate plated with the gold. Thus, the Si is not exposed on the surface evaporated with the gold on the wafer, but the oxidation of the back surface of the wafer can be prevented, and the reliability can be improved without deterioration of the characteristics thereof. |
