发明名称 Zone melting appts. for silicon rods - with very uniform axial and radial temp distribution in recrystallised part of large dia rods
摘要 <p>A high frequency(h.f.) induction coil (3) is located in a vessel (1) which is evacuated or filled with inert gas; and a vertical silicon rod (5) is drawn downwards through coil (3) for zone melting without a crucible. In the wall of vessel (1) is a gastight passage for an h.f. conductor (2), which is connected to coil (3) via a bent or curved lead (14). Lead (14) is pref. bent downwards towards the recrystallised part (4) of rod (5); and part (4) is pref. surrounded by a protective cylindrical sleeve (7), 15-100 cm dia., and coated at least in its bore with Al or Ag. The axial distance between the top edge of sleeve (7) and coil (3) is pref. 0-10 cm. Used to eliminate thermal stresses in part (4), which could lead to cracks in the latter when the rod is cooled, esp. with Si rods e.g. 10 cm in dia.</p>
申请公布号 DE3007416(A1) 申请公布日期 1981.09.10
申请号 DE19803007416 申请日期 1980.02.27
申请人 SIEMENS AG 发明人 KELLER,WOLFGANG,DR.RER.NAT.
分类号 C30B13/16;C30B13/20;(IPC1-7):30B13/20 主分类号 C30B13/16
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