| 摘要 |
PURPOSE:To reduce the size of the entire integrated circuit device by forming a source electrode, a wire layer and a drain electrode, a wire layer without using a mask layer for forming a window connected to the source and drain regions, thereby reducing the size of the window. CONSTITUTION:An element isolating insulating layer 6 is formed on the main surface of the semiconductor substrate 1, and the insulating layer 6 and a thin insulating layer 01 are formed thereon. A conductive layer C1 is formed by an accumulation process, a mask layer M1 is formed, and a conductive layer C2' is formed by etching. With the layers M1, C2' as masks the layer 01 is etched to form a gate insulating layer 9, and regions Z1, Z2 with an element forming region 5 are exposed. Thereafter, a mask M2 is formed by an accumulation process, and the layer C2' sidewisely etched is removed. With the mask M3 as a mask the layer C2' is oxidized thermally to form gate electrode 8 and interlayer insulating layer 32 on the layer C2'. The layer M3 is etched to expose the layers Z1, Z2, and windows H1, H2 are formed. |
