| 摘要 |
PURPOSE:To prevent the ununiformity of heat treatment preventing oxidation of the semiconductor wafer by a method wherein the semiconductor wafer is arranged in a reaction cylinder preventing air back-flowing from an opening part at the opposite side from a gas introducing tube of heat treatment tube and is heat-treated. CONSTITUTION:The semiconductor wafer 5 (6 is a quartz boat) is put in the reac- tion cylinder 7 having ventilating holes to prevent air back-flowing from the opening part 4 at the opposite side from the gas introducing tube 3 of the heat treatment tube 2 consisting of quartz arranged in a heating furnace 1, and the semiconductor wafer is heat-treated (8 is a draw out bar, 9 is an operating device). Accordingly oxidation of the semiconductor wafer by back-flowing air is prevented, and the ununiformity of sintering treatment by the influence of gas current is prevented. |
