| 摘要 |
PURPOSE:To calculate the depth of the diffused region in the semiconductor device by polishing the surface of a silicon substrate with a disc-shaped abrasive, coloring the exposed substrate or diffused region and measuring the distance of a specific boundary. CONSTITUTION:A silicon oxide film 2 is formed as a dielectric layer on the silicon substrate 1, formed in stripe shape, and a P type impurity-added polycrystalline silicon layer 3 is formed on the surface of the residual film. After it is heat treated, a P type diffused region 4 is formed in the monocrystalline silicon substrate 1. This is polished with the disc-shaped abrasive having a radius (r) to form a groove 5 thereon, dipped in a fluoric acid solution, a light is irradiated thereto, and the exposed surface of the P type diffused region is colored in black. After thus colored, the distance l between the boundaries 8 and 10 and the distance (m) between the boundaries 10 and 11 are measured, the thickness of the silicon oxide film 2 is substituted for the formula d=[l(l+m)/2r]-t, thereby calculating the depth of the P type diffused region in the monocrystalline silicon substrate. |
