| 摘要 |
PURPOSE:To improve a measurement precision by reducing nonlinear characteristics of a pressure and produced stress by method wherein a circular notched groove is formed on the surface in the center of a semiconductor element substrate forming the pressure sensor and an annular notched groove surrounding the circular notched groove at an interval is formed on the reverse at the peripheral edge respectively. CONSTITUTION:The circular notched groove 11 is perforated on the surface in the center 9 of the semiconductor substrate 7 and the annular notched groove 12 is formed on the reverse in the middle part 8 located on the outer periphery of the groove 11 with a thin vertical part 10 of the substrate 7 being inserted between the grooves 11 and 12. Thus, a thin part 8a parallel to the substrate 7 is grown on the surface of the middle part 8 and burried with distortion resistance element 6, and the peripheral edge 13 is left as in the thickness of the substrate 7. Whereby force horizontally produced due to the transformation of the thin part 8a and thin vertical part 10 caused when the substrate 7 is applied with a pressure on the surface is remarkably decreased, the nonlinear characteristic of distortion to the pressure being reduced and the measurement precision is improved. |
