| 摘要 |
PURPOSE:To prevent the generation of an interface level by a method wherein a gas of an organic metallic compound and a gas of a hydride are introduced, a fixed compound semiconductor is grown in a gaseous phase at 500-700 deg.C, the gases are changed over to SiH4 and NH3, and the semiconductor is coated with Si3N4. CONSTITUTION:H2 2 is purified 3, and passed through a reservoir 5, triethyl indium is contained, the flow rate is controlled 4, 7, 8 together with PH3 6 diluted at 5% with H2, and the mixture is supplied to a reaction tube 11. An InP substrate 1 on a carbon base 9 is heated 12 by high frequency at 500-700 deg.C measuring 10 a temperature of the base 9 to form InP, and Zn(C2H5)2 is used as a P type and H2S as an N type as impurities. The gases are instantaneously changed over, the flow rate is adjusted 17, 19, 1% NH3 diluted with H2 and 1% SiH4 are flowed, and Si3N4 is ?laminated. According to such constitution, a stable device having excellent characteristics is obtained when a semiconductor growing surface is used as a gate insulating film because the surface is not polluted and an interface is clean. |
