| 摘要 |
Integrated monolithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for interdevice isolation are able to function as drivers that may be switched on and off. The HVMOSFET'S include DMOS-like structures with separate channel and drift regions, closed geometry configurations with center drains, and split oxide topography having relatively thick oxide under a field plate and over a drift region for surface depletion and high voltage field inversion preclusion respectfully. The infra described HVMOSFET includes an active load operatively connected in cascade and connecting to a device switch for forming an integrated HV Active Switch in a monolithic array.
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