| 摘要 |
PURPOSE:To improve a conversion efficiency of the solar battery by allowing a thin P type layer to be formed by a method wherein when a lift penetrable conductive film composed of a semiconductor on a light penetrable insulated substrate and each conductive type noncrystalline Si layer of PIN are layer-built in sequence to make the solar battery, a metallic thin film is inserted between the conductive film and the P type layer. CONSTITUTION:The light penetrable conductive film 2 sich as indium oxide and tin is cover-attached on the light penetrable insulated substrate 1 made of glass or the like, and the noncrystalline Si layer 3 comprising the P type layer 5, I-type layer 6 and N type layer 7 are formed on the film 2 to make the solar battery. With such a construction, the metallic thin film 8 large in a work function such as plastinum, rhodium, iridium, gold and the like which are made 10-100Angstrom in thickness are left formed between the conductive film 2 and the P type layer 5 by means of an electron beam evaporation, and an A back electrode 4 is attached to the N type layer 7. Whereby the P type layer 5 is not brought into direct contact with the conductive film 2 even being separated in island-shape, due to the extreme thinness of the layer 5 as 50Angstrom , but contacts with the thin film 8 to form a shot junction, and an open-circuit voltage is not decreased. |
