发明名称 |
Apparatus for the manufacture of epitaxial Ga1-xAlxAs:Si film |
摘要 |
Apparatus for manufacturing epitaxial Ga1-xAlxAs:Si films via liquid-phase epitaxy, using a boat in a quartz tube. The Ga, which is contained in a graphite boat, open at the long side, is baked out first. The Ga-melt is allowed to run onto GaAs substrate wafers, on which Si is deposited, and to be drawn into the gap between the GaAs-substrate wafers and the plane graphite surfaces. The thin Ga-melt formed above the GaAs substrate wafers is then brought into contact with the melted Al and is allowed to cool. |
申请公布号 |
US4287848(A) |
申请公布日期 |
1981.09.08 |
申请号 |
US19790084155 |
申请日期 |
1979.10.12 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
LEIBENZEDER, SIEGFRIED;HEINDL, CHRISTINE |
分类号 |
H01L33/00;C30B19/00;C30B19/04;C30B19/06;C30B29/40;H01L21/208;(IPC1-7):05C5/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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