发明名称 MANUFACTURE OF SEMICONDUCTOR SUPPORTING ELECTRODE
摘要 PURPOSE:To obtain a supporting electrode having high conductivity, low thermal resistance and a low thermal expansion coefficient by laminating Cu or Al to a Cu-C filber compound body. CONSTITUTION:A composite fiber bundle of Cu-C with about 8mum diameter, plated with Cu with 1mum thickness is spirally wound, and temporarily sintered in the H2 at 350 deg.C. A Cu plate with the same diameter is stacked, and the whole is set into a graphite case, and pressed by the force of 1 ton in the H2 at 850 deg.C. In the molded electrode, a supporting electrode with the desired dimensions is cut out using the fiber compound body side as the reference. In this case, the texture of the C fibers are not disordered at all, and unified with the Cu plate. According to such constitution, the excellent semiconductor supporting electrode is obtained at high yield.
申请公布号 JPS56114337(A) 申请公布日期 1981.09.08
申请号 JP19800016661 申请日期 1980.02.15
申请人 HITACHI LTD 发明人 BABA NOBORU;OONUKI HITOSHI;TENNO HIROSHI;KUNIYA KEIICHI;ARAKAWA HIDEO
分类号 H01L21/52;H01L23/492 主分类号 H01L21/52
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