| 摘要 |
PURPOSE:To perform refreshing operation easily and rapidly by refreshing a charge pump (CP) memory which performs information storage by injecting a small number of carriers into a floating substrate or region, and performing said refreshing at every word line. CONSTITUTION:When pulsating reading voltage VR is applied to word line W1, pieces of information in CP memory cells Q11-Q13 are sent to sense amplifiers SA1-SA3 via bit lines B1, B2 and B3. At this time, holding word lines W2 and W3 at 0V permits sense amplifiers SA1, SA2 and SA3 to output Vcc, 0 and Vcc, for example, when pieces of information in Q11, Q12 and Q13 have values ''1'', ''0'' and ''1''. After a latch circuit holds bit lines B1 and B3 of Q11 and Q13 at 0V and bit line B2 of Q12 at Vcc, applying gate voltage Vcp for CP to work line W1 refreshes Q11 and Q13. As for word lines W2 and W3, the same operations are performed to refresh other cells Q21-Q33. |
