| 摘要 |
PURPOSE:To reduce the edge effect, by providing the region changing the characteristic in the magnetic layer having the magnetic circuit which by-passes the gap part. CONSTITUTION:Diffusion materials film 8 consisting of materials, which enhances crystal magnetic anisotropy or reduce saturation magnetization, such as chromium is formed except the part near the gap part of magnetic layer by the lift-off method, and mask 9 for ion etching is formed on film 8 and the region including the magnetic layer, where film 8 is not formed, and the gap. Then, the ion etching treatment is adopted to remove mask 9 and film 8 to finish the floating face. In the ion etching treatment, temperature rises to approximately 300 deg.C in mask 9 due to collision of ion particles. This heat is transferred to chromium layer 8, and chromium particles diffuse heat into magnetic layer 1. In the part where crystal chromium particles are diffused, coercive force Hc is increased to enhance crystal magnetic anisotropy, and the edge effect is reduced to a degree which is ignored practically. |
