| 摘要 |
PURPOSE:To arrest characteristic deterioration of the photovoltaic force element caused by undesirable residual impurities by a method wherein when a plurality of different kind conductive type noncrystalline Si layers are formed by a plasma reaction, those different kind conductive type layers are formed individually in independent reaction chambers respectively connected in series. CONSTITUTION:A transparent conductive film 2 of indium oxide or the like is cover-attached on a transparent insulated substrate 1 made of glass or the like, noncrystalline Si film 3 consisting of a P type layer 5, nondoped layer 6 and N type layer 7 being reservoired on the film 2 and an Al back electrode 4 is mounted on the layer 7 to be made the photovoltaic force element. With this construction, the film 3 is independently layer-built and grown in the first third reaction chambers 20a-20c connected in series. That is, the substrate 1 on which the film 2 is finished to be formed is moved between electrodes 23 and 24 fitted in each chamber while being isolated by opening and closing shutters 29a-29d, and silane and diborane gases are charged in the 1st chamber 20a, only the silane gas in the 2nd chamber 20b and silane and phosphine gases in the 3rd chamber 20c to cause the respective layers to be grown. |
