| 发明名称 |
METODO DI FABBRICAZIONE DI LEGHE AMORFE FOTOSENSIBILI DI GERMANIO E DISPOSITIVI OTTENUTI CON TALE METODO. |
| 摘要 |
A semiconductor material comprises amorphous Ge containing F (a- Ge: F). The material may also contain H, and may contain a bandgap adjusting element e.g. C or N. The material may be doped and may be utilised in Schottky, MIS, PIN and PN solar cells or in electrophotographic devices. |
| 申请公布号 |
IT8123827(D0) |
申请公布日期 |
1981.09.07 |
| 申请号 |
IT19810023827 |
申请日期 |
1981.09.07 |
| 申请人 |
ENERGY CONVERSION DEVICES INC. |
发明人 |
STANFORD ROBERT OVSHINSKY;VINCENT DAVID CANELLA;MASATSUGU IZU |
| 分类号 |
H01L31/18;C23C14/00;C23C14/06;C23C14/32;C23C16/22;C23C16/44;H01L25/04;H01L29/16;H01L31/0376;H01L31/07;H01L31/20;(IPC1-7):H01L/ |
主分类号 |
H01L31/18 |
| 代理机构 |
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代理人 |
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