| 摘要 |
PURPOSE:To eliminate the bonding breakdown and electrode wiring disconnection of the C-MOSFET by forming a source and a drain through polysilicon, further doping an N type impurity at the N channel side to increase the depth of the junction and forming an electrode on the polysilicon. CONSTITUTION:Three layers of polysilicon layer 8, silicon oxide film 14 and silicon nitride film 15 are formed on an N type substrate 1 having a P type well region 2 and a gate oxide film 7, a window is opened selectively at the three layers, source and drain regions 10a, 10b, 11a, 11b are formed, with the silicon nitride film on the polysilicon as a mask the source and the drain are selectively oxidized on the surfaces, the polysilicon on the N type source and drain regions is exposed, phosphorus is diffused therein, the junction between the source and the drain regions of the P channel side is increased in depth, and the film 15 of the P channel side is converted into the silicon oxide film 17 containing phosphorus. Thus, the C-MOSFET having high density and difficulty in disconnection of aluminum wire can be formed. |
