发明名称 EXPOSURE OF ELECTRON BEAM
摘要 PURPOSE:To prevent the damage of a resist film due to the electron beam by irradiating the film at predetermined time interval with the electron beam of small exposure amount plural times. CONSTITUTION:When a region A is divided into small region segments a1, a2,... and exposed, the electron beam of the exposure amount of, for example, 1/2 of necessary exposure amount is first irradiated, the beam of similar amount is then irradiated second, and necessary exposure amount is thus irradiated. Thus, the damage of the resist film caused by the irradiation of the electron beam having high energy can be prevented.
申请公布号 JPS56112729(A) 申请公布日期 1981.09.05
申请号 JP19800015266 申请日期 1980.02.08
申请人 FUJITSU LTD 发明人 NAKAGAWA KENJI
分类号 G03G15/05;G03F7/20;H01J37/317;H01L21/027 主分类号 G03G15/05
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