VAPOR PHASE EPITAXIAL GROWING APPARATUS

摘要

PURPOSE:To obtain uniform crystal by rotatably providing a reaction gas agitator integral with a retainer for retaining a growing substrate in the reaction container of the vapor phase epitaxial growing apparatus. CONSTITUTION:Vapor phase epitaxial growing gas is introduced from the inlet 2 of the reaction container 1. A plurality of agitators 5 rotatably supported by a rotary shaft 7 are provided in the container 1. Since the substrate 4 is retained via the retainer on the agitators 5, the growing gas acts the substrate 4 while being agitated. Since a plurality of types of stock gases are effectively mixed to grow in equalized state, very uniform vapor phase epitaxial growing crystal can be obtained.