发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To enable to follow the semiconductor laser to transient laser modulation by controlling the temperature of the laser chip so that a temperature detecting diode provided on the same chip as the laser becomes constant in the forward voltage drop, thereby accelerating the temperature control. CONSTITUTION:The semiconductor laser 17 is formed of a laser and a diode 20 on the same chip, and driven by a laser drive circuit 16. The forward voltage drop of the diode 20 is amplified by a level shift amplifier 22, and connected to a power amplifier 23. The amplifier 23 controls the Peltier element 24. The element 24 and the laser 17 are thermally coupled. A loop having the diode 20, the amplifiers 22 and 23 and the Peltier element 24 forms a negative feedback loop. When the temperature of the diode 20 is raised to cause the forward voltage drop to be reduced, the temperature of the Peltier element 24 is lowered.
申请公布号 JPS56112788(A) 申请公布日期 1981.09.05
申请号 JP19800015760 申请日期 1980.02.12
申请人 CANON KK 发明人 YOKOMIZO YOSHIKAZU
分类号 H01S5/00;H01S5/068 主分类号 H01S5/00
代理机构 代理人
主权项
地址