| 摘要 |
PURPOSE:To obtain high withstand voltage semiconductor devoce by covering a base electrode through an insulating film on the entire periphery of the base and collector bonding surface, isolating the base region and extending the leading electrode from the high density collector region surrounding the base. CONSTITUTION:A P type semiconductor substrate is used as a collector region 17, and an N type base region 21 is formed. Then, a P type emitter region 32 is formed, and a P<+> type high density region 18 isolated at a predetermined distance from a base and connector bonding surface 24 is simultaneously formed to surround the base region 21. Then, an insulating film 29 is formed on the surface, and an emitter electrode 33, a base electrode 22 and a guard ring leading electrode 19 are formed. At this time the base electrode 22 exceeds the bonding surface 24 and surround the entire periphery of the base region, and the guard ring leading electrode 19 exceeds the bonding surface 28 of the region 18 and the region 17 to the base side and surrounds the base region. Thus, a depletion layer 25 is largely expanded in the vicinity of the surface, and the withstand voltage can be improved. |
