HALBLEITERANORDNUNG ZUR HOCHFREQUENZLEISTUNGSBEGRENZUNG

摘要

An H.F. power limiter comprises a monocrystalline semiconductor layer 2 provided on an insulating substrate 1. Two diodes 3, 2 are arranged back to back beside each other. The thickness and the doping concentration of the semiconductor layer 2 are so small that upon applying a reverse voltage across a diode the depletion zone extends throughout the thickness of the semiconductor layer even at a voltage which is lower than the breakdown voltage.