| 摘要 |
<p>A buried contact (44) to the active region of an MOS device is formed by initially defining the channel region and contact region by a nitride layer (16) on a semiconductor substrate (10) of a first conductivity type. The substrate (10) is doped in a third region (22) between the contact and channel regions with a dopant of a second conductivity. Thick oxide (28) is then grown over the third region. The nitride is then removed from the channel and contact regions and thin oxide (30) is formed over the channel region. A conductor (32, 34), preferably polycrystalline silicon, is then formed over the channel and contact regions. The contact region of the substrate is then doped with a material of the second conductivity type, preferably through the polycrystalline silicon layer. </p> |
