| 摘要 |
PURPOSE:To provide an ion sensor, which improves the adhesive characteristic of organic high-molecular layer without spoiling the characteristic of FET, by forming the gate insulating film by inorganic compound layer and organic high-molecular layer and roughening the contacting surface of both layers. CONSTITUTION:The gate surface of FET is roughened by directly roughening the surface of silicon nitride, etc. of said gate surface or sputtering or vapor depositing inorganic compound. Organic high-molecular substance such as fluorohydrocarbon resin is coated on said roughened layer. Hereby, said organic high-molecular layer is firmly fixed on the inorganic compound layer. Lowering of sensitivity or drift of electric potential is not generated in this ion sensor even when it is used for a long- time monitoring and a superior performance is maintained. |
