| 摘要 |
PURPOSE:To prevent the corrosion of a wiring due to the defects of a protective film, by covering a wiring film of either Al or its alloy with a protective film and forming nonporous alumina by an anodization. CONSTITUTION:An N<-> epitaxial layer on a P type Si substrate having an N<+> buried layer is separated by a P<+> layer, and on a P<+> layer 105, an N<+> layer 106 and an N<-> epitaxial layer 103, electrodes 110-112 are formed. When PSG113 is stacked on this and sintered at approximately 500 deg.C, fine cracks and defect 114 occur. Then a anodization is performed in an electrolytic bath of ethylen glycol containing 30% NH4NO3 under the 50-100V with the substrate as a positive and the Pt as a negative. At this time on the Al wiring of the defect 114, nonporous Al2O3 115 is formed to rectify the defects. Subsequently the PSG is etched selectively to form a conjunction pad 116. Because the protective film is perfectly rectified, a device of the electrode wiring structure with a high reliability can be obtained. |
