| 摘要 |
PURPOSE:To raise luminous efficiency and to lower the cost therefor by specifying the thickness and composition of layers to form a luminous part when a p type GaAlAs layer serving as the luminous part and an n type GaAlAs layer are laminated to form a luminous diode on a p type GaAs substrate. CONSTITUTION:The p type Ga1-xAlxAs layer 8 serving as a luminous part and the n type Ga1-yAlyAs layer 9 are laminated on the p type GaAs substrate 7 by a temperature difference method and a continuous liquid-phase growing method, and an electrode 10 and an electrode 11 are provided on the whole of the back surface of the layer 7 and in the central part of the surface of the layer 9, respectively, whereby the luminous diode is constituted. And, the luminescence 12 from the layer 8 is projected outside through the layer 9. In such a constitution, the thickness (d) of the layer, which is then luminous part, is set in the range within 5-40mum, while in respective compositions (x) is set to be 0.3<=x<=0.37 and the relation between (x) and (y) to be x<y. In this way, deterioration of the crystallinity of the boundary part of P-N junction is avoided and excellent characteristics are obtained. |
