| 摘要 |
PURPOSE:To enable to obtain high speed and low power consumption, by using a FF for a sense amplifier in case of RAM or the like. CONSTITUTION:Each input signal of opposite phase is input to a differential amplifier 22 using MOSFET from terminals 2 and 3, the amplified output is fed to the gate of an enhancement type MOSFET constituting a FF23, and after it is further amplified, it is fed to C-MOS inverters 20, 21. Further, an amplifier signal is output from each inverter. |
