| 摘要 |
<p>PURPOSE:To speed up the information readout with a simple constitution, by applying the output of memory section to a sense amplifier via the voltage set means setting a voltage near the threshold value of the sense amplifier at precharge period. CONSTITUTION:FETs 13 and 17 of the memory 11 are respectively ON and OFF with the signal phiT1 at precharge period T1 for precharge and FETs 22 and 24 of a voltage set circuit 25 connecting the memory section 11 and the sense amplifier 16 via a capacitor 20 are both ON. Thus, the node 19 of the circuit 25 is set to somewhat low level than a threshold voltage Vth1 of the amplifier 26 and the output of the amplifier 16 is 0 volt, and the node 19 and the node 15 of the memory section 11 are coupled with the capacitor of a given potential difference. Thus, when the level change of the node 15 of the memory section 11 is started at readout, the voltage of a node 19 is immediately reached to the threshold voltage Vth1, allowing the readout of information by the sense amplifier with a simple constitution in high speed.</p> |
