| 摘要 |
PURPOSE:To improve homogeneity and speed of etching, by annealing by means of ultraviolet ray irradiation in the phototype process. CONSTITUTION:A photoresist is coated on a semiconductor wafer, and a mask is applied according to the conventional method. After applications of exposure, developing and rinsing, vacuum baking is performed with ultraviolet ray irradiation. With such an arrangement, because the surface of the resist is activated and the etching speed is improved, and because the reactive particles in the resist can be perfectly cross-linked, the masking properties are improved. Thus a fine patterning can be performed with high precision. |
