| 摘要 |
PURPOSE:To obtain the laser having large mechanical strength by growing an (InGa) (AsP) active layer on an InP substrate having a surface (100), applying anisotropic etching thereof to form a resonating surface intruding into the side surface thereof, and covering the place with a layer having a large band interval. CONSTITUTION:An N type InP layer 11, the (InP) (AsP) active layer 12 and a P type InP layer 13 are laminated and grown on the InP substrate 10 having the surface (100), whereon a stripe-shaped mask of an SiO2 film 14 whose one side is turned toward the direction 100 is formed. Next, etching is applied by using mixed acid of H2SO4 and H2O2 and H2O and a surface (010) is made present by utilizing that the speed of etching is different according to the direction of crystal. In this way, etching is performed until it intrudes into the layer 11 located under the active layer 12 and thereby a laser mirror surface 16 with level difference is obtained on the side surface of the active layer 12. Thereafter on the side surface of the active layer 12 including the surface 16 the (InGa) (AsP) layer 18 having a larger band interval than that of the layer 12 is grown and thereby the mirror surface 16 is protected. |
