| 摘要 |
PURPOSE:To prevent a gate insulation film from being damaged by performing exposure in such a manner that the region of a gate electrode is protected from irradiation on a charged beam or X-ryas. CONSTITUTION:A poly-Si gate electrode 14 is formed on a P type Si substrate 11 through the intermediary of a gate oxidized film 13 and a source region 15 and a drain region 16 are formed. Afterward, the whole surface is coated with a CVD oxidized film 17 and, a contact hole being made, the whole surface is coated with an Al film 18. subsequently the surface thus coated is covered with positive- type electron beam sensitive resist 19. Thereafter a take-out wiring pattern is exposed by using an electron-beam exposure device. On the occasion, the gate electrode 14 is protected from irradiation of electron beams. The pattern is developed subsequently, the film 18 is taken out by patterning, and thus wirings 181-183 are formed. Accordingly, the take-out wiring 181 from the electrode 14 is left so as to cover the region of the electrode 14. By this method, the gate insulation film can be prevented from being damaged, so that it may have a stable gate threshold voltage. |
