| 摘要 |
PURPOSE:To form a pattern with high resolution by irradiating a soft X-rays of specific wavelength band onto a transfer pattern forming layer through the intermediary of a mask pattern which was formed by irradiating an electronic beam, etc. on the resist of an organic substance or an inorganic substance. CONSTITUTION:A resist film 4' is provided on the other main surface of a silicon substrate 1' having a waycoat film 2 with an ordinary organic resist (e.g. FBM) or an inorganic resist consisting of SeGe chalcogenite glass and CS2, etc. through polyparaxylene film. Then an electronic beam, X-rays or ultraviolet ray are irradiated onto the said regist film to form a pattern. Further, silicon in a part where the waycoat film does not exist is removed to form a mask and through this mask, a soft X-rays at 18-230Angstrom is irradiated on a transfer pattern formation layer to form a pattern. In this manner, pattern precision on a mask can be improved and through put also can be enhanced significantly. |
