| 摘要 |
PURPOSE:To increase the depth of an impurity doped region and improve controllability by irradiating a light element charged particle onto a semiconductor substrate provided with an impurity layer. CONSTITUTION:An impurity layer 3 consisting of an impurity (e.g. Sb) is formed in a desired pattern on the surface of an Si semiconductor substrate. Next, a protection layer 4 composed of polysilicon, amorphous silicon or oxidized silicon is formed. Following this process, a light element charged particle 5 made up of proton, deuteron, helium etc. is irradiated to control acceleration voltage, etc. As a result, an impurity doped region 6 with well controllable depth is formed. Then it is thermally treated at 800 deg.C to form an N type region. Thus it is possible to form an impurity doped region with more depth compared with the heat diffusion method or the ion injection method. |
