发明名称 THERMAL TREATMENT DEVICE FOR SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To enable take-in/take-out operation of a semiconductor substrate through a small space without generation of dust by providing plural rotatable bar-shaped members having a spiral groove for holding a substrate, in a tubular member of a semiconductor thermal treatment device. CONSTITUTION:Bar-shaped members 26a, 26b having spiral grooves 27a, 27b provided are erected in a tubular member of a semiconductor thermal treatment device 10 in a freely movable manner. A semiconductor substrate 15 is set in this groove and the bar-shaped members 26a, 26b are rotated simultaneously with a motor 31 at low speed rotation with a speed reducer to charge and discharge the substrate 15. As a result, stroke action is no longer required and therefore, the substrate can be charged and discharged at an opening 25. For this reason, only a small space is required and besides dust is not generated because it is not necessary to slide the bar-shaped member and the tubular member close to each other.
申请公布号 JPS56110228(A) 申请公布日期 1981.09.01
申请号 JP19800014013 申请日期 1980.02.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 IMANAKA SEIJI
分类号 H01L21/205;C30B35/00;H01L21/22;H01L21/31 主分类号 H01L21/205
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