| 摘要 |
PURPOSE:To reduce manhours by forming the first semiconductor layer of the first electroconductive type and the P-N junction second semiconductor layer of the second electroconductive type are formed on an active layer, and forming an impurity diffusion layer reaching the first semiconductor layer from the groove of the second semiconductor layer. CONSTITUTION:The first semiconductor layer of the first electroconductive type and the P-N junction second semiconductor layer of the second electroconductive type are formed on an active layer. The first electroconductive-type impurity is introduced only to the first semiconductor layer part corresponding to a groove part from the groove part formed as the second semiconductor layer, thus forming the third semiconductor layer. For instance, on the active layer 103, the first semiconductor layer 104 of the first electroconductive type and the second semiconductor layers 105, 201 consisting of the two second electroconductive layers are formed. A mesa groove 202 is formed on the surface of the former layers to be followed by the formation of an impurity diffusion layer 108. In this way, it is possible to reduce manhours to obtain a reliable semiconductor laser element. |
