| 摘要 |
PURPOSE:To reduce a threshold value current value, increase an external differential qantum efficiency and also stabilize action by holding an active layer and a light guide layer by a clad layer to form a double hetero seam and providing a pair of reflective faces. CONSTITUTION:An N type Al0.38Ga0.62As layer 11, an N type Al0.16Ga0.76As light guide layer 12, an N type GaAs active layer 13 and an N type Al0.28Ga0.62As layer 14 are formed on an N type GaAs base 10. Next, an SiO2 film is formed and zinc is diffused through a window 15. Following this process, after removal of the SiO2 film, the SiO2 film is again formed and zinc is again diffused at low concentration rate through a stripe-shaped window 16. A region 13 where zinc is diffused of the active layer 12 is converted to a P type. Then the SiO2 film is removed and zinc is diffused at high concentration rate through the SiO2 having a stripe-shaped window 18. Later a P type ohmic contact 19 and an N type ohmic contact 20 are attached. |
