| 摘要 |
PURPOSE:To prevent high-temperature leak current and cracking of a substrate by providing a groove so that a P-N junction part may be exposed and making the depth of the groove 70-110% of the P-N junction depth by means of a glass passivation semiconductor element to be coated with a glass flim. CONSTITUTION:A glass passivation thyrister pellet 1 is composed of a P type emitter diffusion layer 6, an N type substrate 5, a P type base diffusion layer 4 and an N type emitter diffusion layer 3. An exposed P-N junction part between the N type substrate 5 and the P type emitter layer 6 as well as the said part between the N type substrate 5 and the P type base layer 4 has a groove formed respectively. Then the groove is coated by a glass. The depth of the groove (z) is equivalent to 70-110% of the depth of the P-N junction xjp . Thus a high-temperature leak current can be minimized and the cracking of a semiconductor substrate at time of assembly can be prevented. |
