SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To increase a charge accumulated in a memory unit and stabilize memory action by providing a circuit to generate a cell plate voltage which is higher than a power supply voltage. CONSTITUTION:A memory cell plate 3 is formed as a metal electrode through a thin insulation film 2 on a semiconductor substrate 1, so that a memory cell of MIS structure is constituted. A diffusion layer 6 connected to a word line 4 and a bit line 5 composes an MIS transistor Q1. Then a cell plate voltage generating circuit 7 which generates a voltage which is higher than a power supply voltage VDD supplied to this unit is provided on a semiconductor chip constituting the unit and the same chip, and an output voltage from the circuit 7 is applied to a memory cell plate 3. Consequently, the amplitude range of a bit line which is effective for the control of a charge accumulated in a memory cell is extended and the maximum accumulated charge is increased.