| 摘要 |
PURPOSE:To prevent poor contact in an opening and eliminate disconnection by providing an insulation film with the first open hole for electrode formation on a semiconductor substrate and forming the second open hole which is larger than the first open hole. CONSTITUTION:An insulation film 2 is provided on a semiconductor substrate 1 with a diffusion layer 3 formed to form the first open hole for electrode formation. On the insulation film, a photoresist pattern 4 is provided and is exposed using a mask 8 having a metal pattern 7 which is larger than the first open hole, so that the second open hole is formed. Thus the surface of the substrate is exposed. As a result, an open hole which is well controllable free from the reflective effect of ultraviolet ray from the first open hole can be formed and consequently poor contact following the opening of a hole can be eliminated and the disconnection can be prevented. |
