| 摘要 |
PURPOSE:To enhance bonding efficiency by forming a wave conductive channel layer having a wider space than an active layer and consisting of the same InGaAsP as the active layer on an InP substrate with the active layer sandwiched and providing a reflection face and a groove with the help of two different types of etching solution. CONSTITUTION:On an InP substrate (100), a wave conductive channel layer 10 consisting of an InGaAsP layer and made up of the same material as the active layer is formed with the active layer 10 sandwiched. The active layer 10 and the wave conductive channel layer 9, 11 are etched with the first etching solution to form a reflective face 13. Then the InP substrate 7 is etched through with the second etching solution to form a groove 14. In this manner, it is possible to manufacture a reflective face of high bonding efficiency through etching process. |
