| 摘要 |
<p>Electrophotographic image generation material contains a substrate and a photo-conductive layer, (103), pref. 1-70 mu thick. The photo-conductive layer comprises an amorphous material contg. Si atoms, as matrix, and halogen atoms, as component atoms. A barrier layer can be interposed between the substrate (101) and the photo-conductive layer. The photo-conductive layer can be p-doped with 10 power minus 6 to 10 power minus 3 atom % of Gp. IIIA atoms or n-doped with 10 power minus 8 to 10 power minus 3 atom % of Gp. VA atoms. In a specific embodiment, the photoconductive layer comprises a 1st p- or n-conductive layer zone of amorphous material, contg. Si atoms as matrix and halogen atoms as component atoms; and 2nd n- or p-conductive layer zone of amorphous material, contg. Si atoms as matrix, and an intermediate barrier layer. High quality images can be obtd. The material is heat-stable.</p> |
